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savantic semiconductor product specification silicon pnp power transistors 2SB1436 d escription with to-126 package complement to type 2sd2166 low collector saturation voltage applications for audio power amplifier applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -30 v v ceo collector-emitter voltage open base -20 v v ebo emitter-base voltage open collector -6 v i c collector current (dc) -5 a i cm collector current-peak -10 a t a =25 1.5 p d total power dissipation t c =25 5 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon pnp power transistors 2SB1436 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)cbo collector-base breakdown voltage i c =-50a ;i e =0 -30 v v (br)ceo collector-emitter breakdown voltage i c =-1ma ;i b =0 -20 v v (br)ebo emitter-base breakdown voltage i e =-50a ;i c =0 -6 v v cesat collector-emitter saturation voltage i c =-4a ;i b =-0.1a -1.0 v i cbo collector cut-off current v cb =-20v; i e =0 -0.5 a i ebo emitter cut-off current v eb =-5v; i c =0 -0.5 a h fe dc current gain i c =-0.5a ; v ce =-2v 180 390 f t transition frequency i e =50ma ; v ce =-6v; f=30mhz 120 mhz c ob collector output capacitance i e =0 ; v cb =-20v; f=1mhz 60 pf
savantic semiconductor product specification 3 silicon pnp power transistors 2SB1436 package outline fig.2 outline dimensions

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